vishay siliconix si7445dp document number: 71626 s09-0270-rev. d, 16-feb-09 www.vishay.com 1 p-channel 20-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 available ? trenchfet ? power mosfet ? new low thermal resistance powerpak ? package with low 1.07 mm profile ? 100 % r g tested applications ? load switch battery applications product summary v ds (v) r ds(on) ( )i d (a) - 20 0.0077 at v gs = - 4.5 v - 19 0.0094 at v gs = - 2.5 v - 17 0.0125 at v gs = - 1.8 v - 15 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view ordering information: SI7445DP-T1-E3 (lead (pb)-free) si7445dp-t1-ge3 (lead (pb)-free and halogen-free) p-channel mosfet g s d notes a. surface mounted on 1" x 1" fr4 board. b. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak so-8 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the si ngulation process in manufactu ring. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. c. rework conditions: manual soldering with a soldering iron is not recommended for leadless components. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150c) a t a = 25c i d - 19 - 12 a t a = 70c - 15 - 9 pulsed drain current i dm - 50 continuous source current (diode conduction) a i s - 4.3 - 1.6 maximum power dissipation a t a = 25c p d 5.4 1.9 w t a = 70c 3.4 1.2 operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) b, c 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 s r thja 18 23 c/w steady state 52 65 maximum junction-to-case (drain) steady state r thjc 1.0 1.3
www.vishay.com 2 document number: 71626 s09-0270-rev. d, 16-feb-09 vishay siliconix si7445dp notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless otherwise noted specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.45 - 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 70 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 40 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 19 a 0.0064 0.0077 v gs = - 2.5 v, i d = - 17 a 0.0078 0.0094 v gs = - 1.8 v, i d = - 10 a 0.0105 0.0125 forward transconductance a g fs v ds = - 15 v, i d = - 19 a 75 s diode forward voltage a v sd i s = - 4.3 a, v gs = 0 v - 0.65 - 1.1 v dynamic b total gate charge q g v ds = - 15 v, v gs = - 5 v, i d = - 19 a 92 140 nc gate-source charge q gs 19 gate-drain charge q gd 16.5 gate resistance r g 123.4 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 15 i d ? - 1.0 a, v gen = - 4.5 v, r g = 6 40 60 ns rise time t r 45 65 tu r n - o f f d e l ay t i m e t d(off) 400 600 fall time t f 190 290 source-drain reverse recovery time t rr i f = - 4.3 a, di/dt = 100 a/s 50 80 output characteristics 0 10 20 30 40 50 0246810 v gs = 5 v thru 2 v 1.5 v v ds - drain-to-source voltage (v) - drain current (a) i d transfer characteristics 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 25 c t c = 125 c v gs - gate-to-source voltage (v) - drain current (a) i d - 55 c
document number: 71626 s09-0270-rev. d, 16-feb-09 www.vishay.com 3 vishay siliconix si7445dp typical characteristics 25 c, unless otherwise noted on-resistance vs. drain current gate charge source-drain diode forward voltage 0.000 0.004 0.008 0.012 0.016 0.020 0 5 10 15 20 25 30 v gs = 1.8 v - on-resistance ( ) r ds(on) i d - drain current (a) v gs = 4.5 v v gs = 2.5 v 0 1 2 3 4 5 0 20406080100 v ds = 15 v i d = 19 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs v sd - source-to-drain voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 25 c 50 10 1 - source current (a) i s t j = 150 c capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 3000 6000 9000 12000 15000 048121620 c rss c oss c iss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v i d = 19 a t j - junction temperature ( c) (normalized) - on-resistance r ds(on) 0.000 0.006 0.012 0.018 0.024 0.030 02468 - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) i d = 19 a
www.vishay.com 4 document number: 71626 s09-0270-rev. d, 16-feb-09 vishay siliconix si7445dp typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, seem www.vishay.com/ppg?71626 . threshold voltage - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature ( c) single pulse power, junction-to-ambient 0.001 0 1 160 200 40 10 0.01 time (s) 120 80 power (w) 0.1 normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 65 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
